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ISL9K460P3
July 2003
ISL9K460P3
4A, 600V StealthTM Dual Diode
General Description
The ISL9K460P3 is a StealthTM dual diode optimized for low loss performance in high frequency hard switched applications. The StealthTM family exhibits low reverse recovery current (IRRM) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRRM and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the StealthTM diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost. Formerly developmental type TA49408.
Features
* Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . . tb / ta > 3 * Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . trr < 20ns * Operating Temperature . . . . . . . . . . . . . . . . . . . . 175oC * Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V * Avalanche Energy Rated
Applications
* Switch Mode Power Supplies * Hard Switched PFC Boost Diode * UPS Free Wheeling Diode * Motor Drive FWD * SMPS FWD * Snubber Diode
Package
JEDEC TO-220AB
Symbol
K
CATHODE (FLANGE)
ANODE 2 CATHODE ANODE 1
A1
A2
Device Maximum Ratings (per leg) TC= 25C unless otherwise noted
Symbol VRRM VRWM VR IF(AV) IFRM IFSM PD EAVL TJ, TSTG TL TPKG Parameter Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (TC = 155C) Total Device Current (Both Legs) Repetitive Peak Surge Current (20kHz Square Wave) Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) Power Dissipation Avalanche Energy (0.5A, 80mH) Operating and Storage Temperature Range Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Techbrief TB334 Ratings 600 600 600 4 8 8 50 58 10 -55 to 175 300 260 Units V V V A A A A W mJ C C C
CAUTION: Stresses above those listed in "Device Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
(c)2003 Fairchild Semiconductor Corporation
ISL9K460P3 Rev. B2
ISL9K460P3
Package Marking and Ordering Information
Device Marking K460P3 Device ISL9K460P3 Package TO-220AC Tape Width N/A Quantity 50
Electrical Characteristics (per leg)
Symbol Parameter
TC = 25C unless otherwise noted Test Conditions Min Typ Max Units
Off State Characteristics
IR Instantaneous Reverse Current VR = 600V TC = 25C TC = 125C 100 1.0 A mA
On State Characteristics
VF Instantaneous Forward Voltage IF = 4A TC = 25C TC = 125C 2.0 1.6 2.4 2.0 V V
Dynamic Characteristics
CJ Junction Capacitance VR = 10V, IF = 0A 19 pF
Switching Characteristics
trr trr IRRM QRR trr S IRRM QRR trr S IRRM QRR dIM/dt Reverse Recovery Time Reverse Recovery Time Maximum Reverse Recovery Current Reverse Recovery Charge Reverse Recovery Time Softness Factor (tb/ta) Maximum Reverse Recovery Current Reverse Recovery Charge Reverse Recovery Time Softness Factor (tb/ta) Maximum Reverse Recovery Current Reverse Recovery Charge Maximum di/dt during tb IF = 1A, dIF/dt = 100A/s, VR = 30V IF = 4A, dIF/dt = 100A/s, VR = 30V IF = 4A, dIF/dt = 200A/s, VR = 390V, TC = 25C IF = 4A, dIF/dt = 200A/s, VR = 390V, TC = 125C IF = 4A, dIF/dt = 400A/s, VR = 390V, TC = 125C 17 19 17 2.6 22 77 4.2 2.8 100 54 3.5 4.3 110 500 20 22 A nC A/s A nC ns ns ns ns A nC ns
Thermal Characteristics
RJC RJA Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient TO-220 2.6 62 C/W C/W
(c)2003 Fairchild Semiconductor Corporation
ISL9K460P3 Rev. B2
ISL9K460P3
Typical Performance Curves
8 7 IF, FORWARD CURRENT (A) 6 5 4 100 C 3 2 1 0 0 0.5 1 1.5 2 2.5 3 VF, FORWARD VOLTAGE (V) 0.1 100
o
600 175oC 175oC 25oC 100 150oC 125oC 10 100oC
150oC
IR, REVERSE CURRENT (A)
75oC 1 25oC
200
300
400
500
600
VR , REVERSE VOLTAGE (V)
Figure 1. Forward Current vs Forward Voltage
90 VR = 390V, TJ = 125oC 80 tb AT dIF/dt = 200A/s, 500A/s, 800A/s 70 t, RECOVERY TIMES (ns) 60 50 40 30 20 10 0 1 ta AT dIF/dt = 200A/s, 500A/s, 800A/s 2 3 4 5 6 7 8
Figure 2. Reverse Current vs Reverse Voltage
120 VR = 390V, TJ = 125oC 100 t, RECOVERY TIMES (ns) tb AT IF = 8A, 4A, 2A 80
60
40 ta AT IF = 8A, 4A, 2A 20
0 100
200
300
400
500
600
700
800
900
1000
IF, FORWARD CURRENT (A)
dIF /dt, CURRENT RATE OF CHANGE (A/s)
Figure 3. ta and tb Curves vs Forward Current
IRRM , MAX REVERSE RECOVERY CURRENT (A) VR = 390V, TJ = 125oC 7 dIF/dt = 800A/s IRRM , MAX REVERSE RECOVERY CURRENT (A) 8 8
Figure 4. ta and tb Curves vs dIF/dt
VR = 390V, TJ = 125oC 7 6 IF = 4A 5 4 3 2 1 100 200 300 400 500 600 700 800 900 1000 dIF /dt, CURRENT RATE OF CHANGE (A/s) IF = 2A IF = 8A
6
5 dIF/dt = 500A/s 4
3 dIF/dt = 200A/s 2 1 2 3 4 5 6 7 8 IF, FORWARD CURRENT (A)
Figure 5. Maximum Reverse Recovery Current vs Forward Current
Figure 6. Maximum Reverse Recovery Current vs dIF/dt
(c)2003 Fairchild Semiconductor Corporation
ISL9K460P3 Rev. B2
ISL9K460P3
Typical Performance Curves (Continued)
6 S, REVERSE RECOVERY SOFTNESS FACTOR QRR, REVERSE RECOVERY CHARGE (nC) VR = 390V, TJ = 125oC 5 180 VR = 390V, TJ = 125oC 160 IF = 8A
4
IF = 4A IF = 8A
140 IF = 4A 120
3 IF = 2A 2
100 IF = 2A 80
1 100
200
300
400
500
600
700
800
900
1000
60 100
200
300
400
500
600
700
800
900
1000
dIF /dt, CURRENT RATE OF CHANGE (A/s)
dIF /dt, CURRENT RATE OF CHANGE (A/s)
Figure 7. Reverse Recovery Softness Factor vs dIF/dt
1800 1600 CJ , JUNCTION CAPACITANCE (pF) 1400 1200 1000 800 600 400 200 0 0.03
Figure 8. Reverse Recovery Charge vs dIF/dt
5 IF(AV) , AVERAGE FORWARD CURRENT (A)
4
3
2
1
0 0.1 1.0 10 100 150 155 160 165 170 175 VR , REVERSE VOLTAGE (V) TC , CASE TEMPERATURE (OC)
Figure 9. Junction Capacitance vs Reverse Voltage
Figure 10. DC Current Derating Curve
1.0
ZqJA, NORMALIZED THERMAL IMPEDANCE
DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01
PDM
0.1
t1 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA 10-3 10-2 10-1 t, RECTANGULAR PULSE DURATION (s) 100 101
0.01 10-5
10-4
Figure 11. Normalized Maximum Transient Thermal Impedance
(c)2003 Fairchild Semiconductor Corporation
ISL9K460P3 Rev. B2
ISL9K460P3
Test Circuit and Waveforms
VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF
L IF DUT RG CURRENT SENSE + MOSFET VDD 0 0.25 IRM IRM dIF dt ta trr tb
VGE t1 t2
-
Figure 12. Itrr Test Circuit
Figure 13. trr Waveforms and Definitions
I = 0.5A L = 80mH R < 0.1 VDD = 200V
EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L CURRENT SENSE Q1 VDD DUT R + VDD IV VAVL
IL
IL
t0 t1 t2 t
Figure 14. Avalanche Energy Test Circuit
Figure 15. Avalanche Current and Voltage Waveforms
(c)2003 Fairchild Semiconductor Corporation
ISL9K460P3 Rev. B2
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
FACTTM ACExTM FACT Quiet SeriesTM ActiveArrayTM FAST(R) BottomlessTM FASTrTM CoolFETTM CROSSVOLTTM FRFETTM GlobalOptoisolatorTM DOMETM GTOTM EcoSPARKTM HiSeCTM E2CMOSTM I2CTM EnSignaTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER
ImpliedDisconnectTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM
PACMANTM POPTM Power247TM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM
SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TruTranslationTM UHCTM UltraFET(R) VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I3

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